features marking: 1 h igh diode semiconductor sot- 23 ?? ? symbol parameter value unit v collector-base voltage 40 v v ce o collector-emitter voltage 25 v v eb o emitter-base voltage 5 v i c co llector current 500 ma p c co llector power dissipation 300 mw r j a thermal resistance from junction to ambient 417 /w t j jun ction temperature 150 t st g storage temperature -55 +150 parameter symbol test conditions m in t yp m ax u nit collecto r-base breakdown voltage v (b r)cb o i c = 100 a, i e =0 40 v collecto r-emitter breakdown voltage v (b r)ce o i c =1 ma, i b = 0 25 v emitter-b a se breakdown voltage v ( br )ebo i e = 100 a, i c =0 5 v co llecto r cut-off current i cb o v cb = 40 v , i e = 0 0.1 a co llecto r cut-off current i ce o v cb = 20v , i e =0 0.1 a emitter cut-off current i ebo v eb = 5v , i c =0 0.1 a h fe(1) v ce =1v, i c = 50ma 120 400 dc cu rr ent gain h fe(2) v ce =1v, i c = 500ma 50 collecto r-emitter saturation voltage v ce (sat) i c = 500 ma, i b = 50ma 0.6 v base -emitter saturation voltage v be (sat) i c = 500 ma, i b = 50ma 1.2 v tr ansition frequency f t v ce =6v , i c = 20 ma f= 30mhz 150 mhz rank l h j range 120-200 200- 350 300-400 classification of h fe electrical characteristics (t =25 unless otherwise specified compliment ary to s8550 collect or current: i c =0.5a j3y S8050 sot -23 plastic-encap sulate transistors transistor( np n ) e b c cbo
2 h igh diode semiconductor typical characteristics 0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 1000 11 01 0 0 1 10 100 1000 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 1 10 100 1 10 100 1000 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 0 20 40 60 80 100 120 140 1 10 100 1000 1 10 100 1000 300 30 3 30 3 1500 300 30 3 common emitter v ce =1v collcetor current i c (ma) base-emmiter voltage v be (v) i c v be ?? t a =100 t a =25 i c f t ?? transition frequency f t (mhz) collector current i c (ma) v ce =10v t a =25 collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? t a collector current i c (ma) base-emitter saturation voltage v besat (v) i c v besat ?? =10 t a =100 t a =25 1500 c ob c ib capacitance c (pf) reverse voltage v (v) v cb / v eb c ob / c ib ?? f=1mhz i e =0/i c =0 t a =25 200 20 300 30 3 300 30 3 3 30 300 300 30 3 30 300 common emitter v ce =1v dc current gain h fe collector current i c (ma) t a =100 t a =25 i c h fe ?? 1500 common emitter t a =25 500ua 450ua 400ua 350ua 300ua 250ua 200ua 150ua 100ua i b =50ua collector current i c (ma) collector-emitter voltage v ce (v) static characteristic 3 0.3 30 3 =10 t a =100 t a =25 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) i c v cesat ?? 1500
jshd jshd h l j k ' l r g h 6 h p l f r q g x f w r u package outline dimensions sot-23 suggested pad layout sot-23
4 reel taping specifications for surface mount devices-sot-23 h igh diode semiconductor 30
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